PART |
Description |
Maker |
IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
CM50DY12E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|
CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 100号A一(c
|
Mitsubishi Electric, Corp.
|
CM200DU12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 200安培我(丙)
|
Powerex, Inc.
|
SIM75D06AV1 |
“HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
DIM200WHS17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
50MT060WH 50MT060WHT |
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package HALF-BRIDGE IGBT MTP
|
IRF[International Rectifier]
|
BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM100GB120DN2K 100B12K2 C67070-A2107-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BSM400GB60DN2 400B06N2 C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|